Current Drift Phenomena and Spectroscopic Measurement Method for Insulator Trap Level Parameters in InP MISFETs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-01-20
著者
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Yamaguchi Eiichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory
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MINAKATA Makoto
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Yamaguchi Eiichi
Musashino Electrical Communication Laboratory N.t.t.
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Minakata Makoto
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- Chemical Vapor Deposition and Characterization of a Phosphorus-Nitride (P_3N_5) Gate Insulator for an Inversion-Mode InP MISFET : B-6: III-V DEVICE TECHNOLOGY
- Current Drift Phenomena and Spectroscopic Measurement Method for Insulator Trap Level Parameters in InP MISFETs
- InGaAsP n-Channel Inversion-Mode MISFET
- GaAs-AlGaAs DH Lasers with Buried Facet
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
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- Lifetime of InGaAsP-InP and AlGaAs-GaAs DH Lasers Estimated by the Point Defect Generation Model
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure Lasers
- Optical Absorption at Dark Lines in Degraded Double-Heterostructure Lasers
- Reduction of Quantum Noise in Very Narrow Planar Stripe Lasers
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- Dependence of Net Gain of Buried Laser on Mirror Loss
- Chemical Vapor Deposition of Phosphorus Nitride and Related Compounds
- Application of InGaAsP and AlGaAsSb for Optical Fiber Transmission : SOLID SOLUTIONS
- Isothermal Capacitance Transient Spectroscopy in MIS Structures
- Dark Line Loss in Degraded Double-Heterostructure Lasers
- Lasing Characteristics of Very Narrow Planar Stripe Lasers
- Optically-Gated InP-MISFET : A New High-Gain Optical Detector
- Effect of Temperature Fluctuations on the Surface Terraces of GaAs-AlGaAs Double Hetero Structure Wafers
- DC Drift Phenomena in LiNb0, Optical Waveguide Devices
- GaAs Core Embedded in Al_xGa_As Matrix
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