Isothermal Capacitance Transient Spectroscopy in MIS Structures

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概要

• 論文の詳細を見る

• A general formula for the capacitance transient response in an MIS structure has been developed, including the continuous density distribution of interface states and discrete multi-impurity levels. A new method of spectroscopic measurement is proposed for determining the density distributions and capture cross-sections of interface states and bulk impurity levels under isothermal conditions. The method is then applied to an n-InAs/anodic oxide MIS diode.

• 社団法人応用物理学会の論文
• 1982-11-20

著者

• Yamaguchi Eiichi

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Yamaguchi Eiichi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• Yamaguchi Eiichi

  Musashino Electrical Communication Laboratory N.t.t.

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