Lifetime of InGaAsP-InP and AlGaAs-GaAs DH Lasers Estimated by the Point Defect Generation Model
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概要
- 論文の詳細を見る
Ageing characteristics of conventional double heterostructure lasers have been explained by extending the defect model proposed in connection with remote junction heterostructure lasers. Two major phenomena are responsible for laser degradation: One is that mobile defects remaining in the cladding layer before ageing move toward the pn junction and accumulate there during ageing. Another component is due to the mobile defects created in the active region by the non-radiative recombination of injected carriers. Using this model, the ultimate lifetime of InGaAsP-InP lasers was, for the first time, concluded to be far longer than that of AlGaAs-GaAs lasers.
- 社団法人応用物理学会の論文
- 1979-12-05
著者
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HORIKOSHI Yoshiji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory N. T. T.
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory
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KOBAYASHI Takeshi
Musashino Electrical Communication Laboratory, N.T.T.
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory N. T. T.
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Takeshi
Musashino Electrical Communication Laboratory N.t.t.
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Kobayashi Takeshi
Musashino Electrical Communication Laboratories N.t.t.
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