CVD Al_2O_3 Films on III-V Binary Semiconductors
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概要
- 論文の詳細を見る
Chemical vapor deposited Al_2O_3 films grown on various kinds of III-V compound semiconductor substrate were examined and compared with each other. The ion-beam etching technique was employed as a detection method of non-uniformity lurking inside the film. Dependence of the film quality on the substrate crystal was clearly found : Uniform film was obtained on GaSb. Fairly high density of non-uniformity was found in the films on InP, InSb, InAs and GaAs.
- 社団法人応用物理学会の論文
- 1980-06-05
著者
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KOBAYASHI Takeshi
Musashino Electrical Communication Laboratory, N.T.T.
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Shinoda Yukinobu
Musashino Electrical Communication Laboratory
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Kobayashi Takeshi
Musashino Electrical Communication Laboratories N.t.t.
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