Accelerated Life Test of AlGaAs-GaAs DH Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-08-05
著者
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HORIKOSHI Yoshiji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Seki Yasuo
Musashino Electrical Communication Laboratory N. T. T.
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory N. T. T.
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory
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Wakita Koichi
Musashino Electrical Communication Laboratory N.t.t.
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Wakita Koichi
Musashino Electrical Communication Laboratory N. T. T.
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IWANE Genzo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Iwane Genzo
Musashino Electrical Communication Laboratory N. T. T.
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KOBAYASHI Takeshi
Musashino Electrical Communication Laboratory, N.T.T.
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory N. T. T.
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KAWAKAMI Tsuyoshi
Musashino Electrical Communication Laboratory, N. T. T.
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Kawakami Tsuyoshi
Musashino Electrical Communication Laboratory N. T. T.
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kawakami Tsuyoshi
Musashino Electrical Communication Laboratory
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Kobayashi Takeshi
Musashino Electrical Communication Laboratory N.t.t.
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Kobayashi Takeshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Takeshi
Musashino Electrical Communication Laboratories N.t.t.
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WAKITA Koichi
Musashino Electrical Communication Laboratory, N. T. T.
関連論文
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- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- Chemical Vapor Deposition and Characterization of a Phosphorus-Nitride (P_3N_5) Gate Insulator for an Inversion-Mode InP MISFET : B-6: III-V DEVICE TECHNOLOGY
- Current Drift Phenomena and Spectroscopic Measurement Method for Insulator Trap Level Parameters in InP MISFETs
- Semiconductor Materials for 2〜4μm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers : SOLID SOLUTIONS
- Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 μm Wavelength
- Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
- 1.5 μm Region BH Laser Array
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
- InGaAsP n-Channel Inversion-Mode MISFET
- Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique
- Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
- Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET
- InGaAs/InGaAsP Avalanche Photodiodes and Analysis of Internal Quantum Efficiency
- Required Donor Density of Epitaxial Layers for Al_xGa_Sb Avalanche Photodiodes
- Organometallic VPE Growth of InAs_Sb_xP_y on InAs
- The Stability of Coating Film-Mirror Facet Interfaces of AlGaAs/GaAs DH Laser Diodes
- GaAs-AlGaAs DH Lasers with Buried Facet
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Degradation of InGaAsP/InP DH Lasers in Water due to Facet Deterioration
- Degradation in GaAs/AlGaAs DH Lasers under Ar Laser Irradiation
- Relation between Degradation Rate and Photocurrent in GaAs/AlGaAs DH Lasers
- Degradation of (GaAl)As-GaAs DH Lasers in Water due to Facet Deterioration
- Self-Sustained Pulsation Appearance in InGaAsP/InP DH Lasers during Accelerated Operation
- Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation
- Comparison of Optical Ringing Effects of Injection Lasers for the Internal Loss Modulation and the Direct Modulation
- Life Test of GaAs DH Lasers at Room Temperature
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- Surface Defects on MBE-Grown GaAs
- Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
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- Simultaneous Diffusion of Zinc and Cadmium into InAs
- Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
- Analysis of Dark Currents and Minimum Detectable Powers for InGaAsP Optical Receivers
- Liquid Phase Epitaxial Growth of In_Ga_xAs_Sb_y with InAs Enriched Composition on InAs Substrate
- Liquid Phase Epitaxial Growth of InAs_P_xSb_y on InAs Substrate
- Taper Growth of GaAs-AlGaAs Layers by Wipingless LPE
- Light Extraction Efficiency of the LED with Guide Layers
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure Lasers
- Effects of Uniaxial Stress on the Double Heterostructure Lasers
- Etching of Al_xGa_As in Alkaline Solution
- Organometallic VPE Growth of InAs
- Field Effect of InP Photoluminescence in InP-Electrolyte Structure
- Optical Absorption at Dark Lines in Degraded Double-Heterostructure Lasers
- Reduction of Quantum Noise in Very Narrow Planar Stripe Lasers
- Effect of Impurities on the Quantum Shot Noise Resonance in Double-Heterostructure Lasers
- Effect of Impurities on Relaxation Oscillation of Double-Heterostructure Lasers
- Dependence of Net Gain of Buried Laser on Mirror Loss
- Chemical Vapor Deposition of Phosphorus Nitride and Related Compounds
- Application of InGaAsP and AlGaAsSb for Optical Fiber Transmission : SOLID SOLUTIONS
- Rapid Degradation in GaAs/AlGaAs Lasers Caused by Process-Induced Defects
- CVD Al_2O_3 Films on III-V Binary Semiconductors
- Evaluation of GaAs/AlGaAs Double-Heterostructure Wafers and Lasers by X-ray Topography
- X-Ray Topographic Observations of Defects on the Interface of GaAs-Al_xGa_1-xAs Epitaxial Wafers
- Anomalous Luminescence near the InGaAsP-InP Heterojunction Interface
- Properties of InP Films Grown by Organometallic VPE Method
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- Organometallic VPE Growth of InAs_Sb_x on InAs
- Effect of Impurities on the Surface Morphology of LPE-Grown InGaAsP and InP
- InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
- Baking Effect on the Surface Morphology of GaAs-AlGaAs LPE
- Optically Induced Low Photoluminescence Regions in InGaAsP
- Impurity Effect on Interface Morphology of AlGaAs LPE on Corrugated GaAs Substrates
- InGaAsP/InP Avalanche Photodiode
- Temperature Dependence of Ionization Coefficients for InP and 1.3 μm InGaAsP Avalanche Photodiodes
- Noise Performance of 1.3 μm InGaAsP Avalanche Photodiode at -190℃
- Single Thermal Scan DLTS Method
- Effect of the Facet Radiator on the Coupling between a High Radiance LED and a Fiber
- Dark Line Loss in Degraded Double-Heterostructure Lasers
- Interdiffusion of Al and Ga in Si-Implanted GaAs-AlAs Superlattices
- Lasing Characteristics of Very Narrow Planar Stripe Lasers
- DH Lasers Fabricated by New III-V Semiconductor Material InAsPSb
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- Pseudoquaternary Phase Diagram Calculation of In_ Ga_xAs_Sb_y Quaternary System
- Effect of Impurity Diffusion on the Characteristics of Avalanche Photodiode
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- Suppression of Relaxation Oscillation by Chemical Etching on Cleaved Facets of Semiconductor Lasers
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- Small Area Planar Nb/Nb Josephson Tunnel Junction with High Current Density
- Etch Hills at the Heterointerface in GaAs-Al_xGa_1-xAs Epitaxial Wafers Prepared by LPE
- GaAs Core Embedded in Al_xGa_As Matrix
- Dynamic Behavior of Buried Heterostructure Laser
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