Small Area Planar Nb/Nb Josephson Tunnel Junction with High Current Density
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概要
- 論文の詳細を見る
Small area planar Nb/Nb tunnel junctions with high current density have been fabricated using electron-beam lithography and selective anodic oxidation method. The anodic Nb oxide film worked well as an insulator between the upper and bottom Nb electrodes. The junction area was as mall as from 1.3 to 2.0×10^<-9> cm^2 and the junction showed a critical supercurrent density of from 10^5 to 10^6 A/cm^2. I-V characteristics showed that the junction was composed of a double normal/super proximity sandwich. It was found that junction characteristics depended strongly on those for the top normal layer, formed at the top Nb electrode deposition on the tunnel oxide.
- 社団法人応用物理学会の論文
- 1984-01-20
著者
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Kawakami Tsuyoshi
Musashino Electrical Communication Laboratory Ntt
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Kawakami Tsuyoshi
Musashino Electrical Communication Laboratory
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Takayanagi Hideaki
Musashino Electrical Communication Laboratory Ntt
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Takayanagi Hideaki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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