GaAs Core Embedded in Al_xGa_<1-x>As Matrix
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1975-03-05
著者
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Furukawa Y
Tohoku Univ. Sendai Jpn
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory
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Kawakami Tsuyoshi
Musashino Electrical Communication Laboratory
関連論文
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- Chemical Vapor Deposition and Characterization of a Phosphorus-Nitride (P_3N_5) Gate Insulator for an Inversion-Mode InP MISFET : B-6: III-V DEVICE TECHNOLOGY
- Current Drift Phenomena and Spectroscopic Measurement Method for Insulator Trap Level Parameters in InP MISFETs
- Effect of Heat-treatments on AgGaS_2 Photoluminescence
- Chemical Transport Rate of AgGas_2 in Closed System
- Growth of CdSiAs_2 Single Crystals by Chemical Transportation
- Transpiration Experiment of AgGaS_2
- GaAs-AlGaAs DH Lasers with Buried Facet
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Lifetime of InGaAsP-InP and AlGaAs-GaAs DH Lasers Estimated by the Point Defect Generation Model
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure Lasers
- Optical Absorption at Dark Lines in Degraded Double-Heterostructure Lasers
- Reduction of Quantum Noise in Very Narrow Planar Stripe Lasers
- Effect of Impurities on the Quantum Shot Noise Resonance in Double-Heterostructure Lasers
- Effect of Impurities on Relaxation Oscillation of Double-Heterostructure Lasers
- Dependence of Net Gain of Buried Laser on Mirror Loss
- Chemical Vapor Deposition of Phosphorus Nitride and Related Compounds
- Application of InGaAsP and AlGaAsSb for Optical Fiber Transmission : SOLID SOLUTIONS
- Rapid Degradation in GaAs/AlGaAs Lasers Caused by Process-Induced Defects
- Evaluation of GaAs/AlGaAs Double-Heterostructure Wafers and Lasers by X-ray Topography
- X-Ray Topographic Observations of Defects on the Interface of GaAs-Al_xGa_1-xAs Epitaxial Wafers
- Single Thermal Scan DLTS Method
- Dark Line Loss in Degraded Double-Heterostructure Lasers
- Lasing Characteristics of Very Narrow Planar Stripe Lasers
- Observation of Etched Features of GaAs-Al_xGa_As DH Wafer
- Effect of Temperature Fluctuations on the Surface Terraces of GaAs-AlGaAs Double Hetero Structure Wafers
- Selective Liquid Phase Epitaxy of AlGaAs
- Small Area Planar Nb/Nb Josephson Tunnel Junction with High Current Density
- Etch Hills at the Heterointerface in GaAs-Al_xGa_1-xAs Epitaxial Wafers Prepared by LPE
- GaAs Core Embedded in Al_xGa_As Matrix
- GaAs-AlGaAs Half-Ring Laser Fabricated by Deep Zn Diffusion
- Defect Observations of GaAs-Al_xGa_1-xAs Heterostructures by Transmission Infrared Microscopy