Current-Drift Suppressed InP MISFETs with New Gate Insulator
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-10-20
著者
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Mikami O
Ntt Opto‐electronics Lab. Atsugi‐shi Jpn
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Mikami O
Chubu Univ. Aichi
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Mikami Osamu
Ntt Opto-electronics Laboratories
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HIROTA Yukihiro
NTT Basic Research Laboratories
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Mikami Osamu
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Okamura Masamichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Yamaguchi Eiichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Hirota Yukihiro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory
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Hirota Yukihiro
Musashino Electrical Communication Laboratory
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Okamura Masamichi
Musashino Electrical Communication Laboratory N.t.t.
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Mikami Osamu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yamaguchi E
Ntt Basic Research Laboratories:imra Europe-centre Scientifique
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Yamaguchi Eiichi
Musashino Electrical Communication Laboratory N.t.t.
関連論文
- Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
- Compositional Disordering of In_Ga_As/In_Al_As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
- Si-Induced Disordering of In_Ga_As / In_Al_As Multiquantum Well Structures : Semiconductors and Semiconductor Devices
- Effect of Argon Atmosphere on Self-Absorption of a Spectral Line in Laser Microprobe Analysis
- First Observation of Quantum Hall Effect in InP-MISFET : Semiconductors and Semiconductor Devices
- The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- Chemical Vapor Deposition and Characterization of a Phosphorus-Nitride (P_3N_5) Gate Insulator for an Inversion-Mode InP MISFET : B-6: III-V DEVICE TECHNOLOGY
- Current Drift Phenomena and Spectroscopic Measurement Method for Insulator Trap Level Parameters in InP MISFETs
- InGaAsP n-Channel Inversion-Mode MISFET
- Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique
- Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
- Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET
- Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition
- Photoluminescence of InP Doping Superlattice Grown by Vapor Phase Epitaxy
- Discovery of New Photoluminescence Effect Related to Deep Donor Levels in Si-Doped Al_xGa_As and Microstructures
- GaAs-AlGaAs DH Lasers with Buried Facet
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Lifetime of InGaAsP-InP and AlGaAs-GaAs DH Lasers Estimated by the Point Defect Generation Model
- Compositional Disordering of In_Ga_As/InP Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure Lasers
- A Coupled-Waveguide TE/TM Mode Splitter : B-4: OPTOELECTRONIC DEVICES
- Some Experiments on a Voltage-Induced Optical Waveguide in LiNbO_3
- 1.55 μm GaInAsP/InP Distributed Feedback Lasers
- New Image-Rotation Using Moire Lenses
- New Imaging Functions of Moire by Fly's Eye Lenses
- Solitary Spectral Linewidth and Its Reduction with External Grating Feedback for a 1.55 μm InGaAsP BH Laser
- Optical Absorption at Dark Lines in Degraded Double-Heterostructure Lasers
- Reduction of Quantum Noise in Very Narrow Planar Stripe Lasers
- Effect of Impurities on the Quantum Shot Noise Resonance in Double-Heterostructure Lasers
- Effect of Impurities on Relaxation Oscillation of Double-Heterostructure Lasers
- Dependence of Net Gain of Buried Laser on Mirror Loss
- Chemical Vapor Deposition of Phosphorus Nitride and Related Compounds
- Application of InGaAsP and AlGaAsSb for Optical Fiber Transmission : SOLID SOLUTIONS
- Isothermal Capacitance Transient Spectroscopy in MIS Structures
- Dark Line Loss in Degraded Double-Heterostructure Lasers
- Lasing Characteristics of Very Narrow Planar Stripe Lasers
- Optically-Gated InP-MISFET : A New High-Gain Optical Detector
- Effect of Temperature Fluctuations on the Surface Terraces of GaAs-AlGaAs Double Hetero Structure Wafers
- GaAs Core Embedded in Al_xGa_As Matrix
- 30a-M-2 Anti Stokes photoluminescence related to the deep donor states in Si modulation-doped Al_xGa_As/Al_yGa_As MQW
- Some Experiments on a Voltage-Induced Optical Waveguide in LiNbO3