Compositional Disordering of In_<0.53>Ga_<0.47>As/InP Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
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概要
- 論文の詳細を見る
In_<0.53>Ga_<0.47>As/InP multiple-quantum well (MQW) structures were disordered using a dopant-free technique for the first time. MQW disordering was accomplished by deposition of a Si_3N_4 cap followed by repetitive rapid thermal annealing (RRTA) at 800℃. The optical transmission spectrum for the capped region is blue-shifted by 84 nm relative to a capless region in the 1.5 μm wavelength region. Such a large blue-shift could not be achieved by conventional rapid thermal annealing. The disordered region extends at least 1.7 μm into the MQW structures.
- 社団法人応用物理学会の論文
- 1989-06-20
著者
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IWAMURA Hidetoshi
NTT Opto-electronics Laboratories
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Mikami Osamu
Ntt Opto-electronics Laboratories
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MIYAZAWA Takeo
NTT Opto-electronics Laboratories
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NAGANUMA Mituru
NTT Opto-electronics Laboratories
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IWAMURA Hidetoshi
NTT Optc-electronics Laboratories
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