First Observation of Quantum Hall Effect in InP-MISFET : Semiconductors and Semiconductor Devices

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Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
Compositional Disordering of In_Ga_As/In_Al_As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
Si-Induced Disordering of In_Ga_As / In_Al_As Multiquantum Well Structures : Semiconductors and Semiconductor Devices
A Monte Carlo Supercell Approach for the Effects of Disorder on the Upper-Valley Electronic Properties in InGaAs Ternary Alloys
Effect of Argon Atmosphere on Self-Absorption of a Spectral Line in Laser Microprobe Analysis
First Observation of Quantum Hall Effect in InP-MISFET : Semiconductors and Semiconductor Devices
The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
Current-Drift Suppressed InP MISFETs with New Gate Insulator
Cold Nuclear Fusion Induced by Controlled Out-Diffusion of Deuterons in Palladium
InGaAsP n-Channel Inversion-Mode MISFET
Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique
Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET
Discovery of New Photoluminescence Effect Related to Deep Donor Levels in Si-Doped Al_xGa_As and Microstructures
27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
Compositional Disordering of In_Ga_As/InP Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
First Principle Calculation and Photoluminescence Spectroscopy of the DX Center
Superlattice Approach to the Interface States in III-V Semiconductors
First Principle Calculation of the DX-Center Ground-States in GaAs,Al_xGa_As Alloys and AlAs/GaAs Superlattices

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