Superlattice Approach to the Interface States in III-V Semiconductors

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概要

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• The electronic structures of insulator-semiconductor (I-S) interfaces are in-vestigated for III-V semiconductors, GaAs, Inks and Ink, using the superlatticemethod. Here, the overlayer insulators are simulated with the lattice-matched II-Vlalloys,ZnSe. .Te,or ZnS. ,Te,. Itis shown that flue heterointerface bond relaxationstrongly affects interface-band formation in the bandgap. In GaAs I-S systems,relaxed Ga bonds at the heterointerface induce a vacant interface band and a filledinterface band in the bandgap. Consequently, the Fermi level is pinned around themidgap. By contrast, in Inks I-S systems, relaxed In bonds only induce a filled inter-face band below the conduction band edge. Specifically, at (001) Inks-insulator inter-faces with relaxed interface bonds, the interface band merges with the conductionband and exhibits metallic structures. These trends are consistent with experimentalresults.

• 社団法人日本物理学会の論文
• 1988-07-15

著者

• YAMAGUCHI Eiichi

  NTT Basic Research Laboratories

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