First Principle Calculation and Photoluminescence Spectroscopy of the DX Center

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-01-01

著者

• YAMAGUCHI Eiichi

  NTT Basic Research Laboratories

• Junnarkar M

  Ntt Basic Res. Lab. Atsugi

• Junnarkar Mahesh

  NTT Basic Research Labs.

• Junnarkar Mahesh

  Ntt Basic Research Laboratories

関連論文

• A Monte Carlo Supercell Approach for the Effects of Disorder on the Upper-Valley Electronic Properties in InGaAs Ternary Alloys
• First Observation of Quantum Hall Effect in InP-MISFET : Semiconductors and Semiconductor Devices
• Cold Nuclear Fusion Induced by Controlled Out-Diffusion of Deuterons in Palladium
• Discovery of New Photoluminescence Effect Related to Deep Donor Levels in Si-Doped Al_xGa_As and Microstructures
• 27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
• First Principle Calculation and Photoluminescence Spectroscopy of the DX Center
• Computer Simulation of Ultra-Short Optical Pulse Propagation in Solid and Hollow Wave-Guides
• Superlattice Approach to the Interface States in III-V Semiconductors
• 27p-YQ-12 Near two-photon-resonance self-pulse compression in atomic Xenon
• First Principle Calculation of the DX-Center Ground-States in GaAs,Al_xGa_As Alloys and AlAs/GaAs Superlattices
• 30a-M-2 Anti Stokes photoluminescence related to the deep donor states in Si modulation-doped Al_xGa_As/Al_yGa_As MQW

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