Yamaguchi E | Ntt Basic Research Laboratories:imra Europe-centre Scientifique
スポンサーリンク
概要
関連著者
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Yamaguchi E
Ntt Basic Research Laboratories:imra Europe-centre Scientifique
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Mikami O
Ntt Opto‐electronics Lab. Atsugi‐shi Jpn
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Mikami O
Chubu Univ. Aichi
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Mikami Osamu
Ntt Opto-electronics Laboratories
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HIROTA Yukihiro
NTT Basic Research Laboratories
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Okamura Masamichi
Musashino Electrical Communication Laboratory N.t.t.
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YAMAGUCHI Eiichi
NTT Basic Research Laboratories
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OKAMURA Masamichi
NTT Basic Research Laboratories
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OKAMURA Masamichi
NTT Electrical Communications Laboratories
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HIROTA Yukihiro
NTT Electrical Communications Laboratories
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YAMAGUCHI Eiichi
NTT Electrical Communications Laboratories
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MIKAMI Osamu
NTT Electrical Communications Laboratories
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Mikami Osamu
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Okamura Masamichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Yamaguchi Eiichi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Hirota Yukihiro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory
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Hirota Yukihiro
Musashino Electrical Communication Laboratory
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Mikami Osamu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yamaguchi Eiichi
Musashino Electrical Communication Laboratory N.t.t.
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Junnarkar R.
IMRA Europe-Centre Scientifique
著作論文
- First Observation of Quantum Hall Effect in InP-MISFET : Semiconductors and Semiconductor Devices
- The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- Discovery of New Photoluminescence Effect Related to Deep Donor Levels in Si-Doped Al_xGa_As and Microstructures