The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-06-20
著者
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Mikami O
Ntt Opto‐electronics Lab. Atsugi‐shi Jpn
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Mikami O
Chubu Univ. Aichi
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Mikami Osamu
Ntt Opto-electronics Laboratories
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HIROTA Yukihiro
NTT Basic Research Laboratories
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OKAMURA Masamichi
NTT Electrical Communications Laboratories
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HIROTA Yukihiro
NTT Electrical Communications Laboratories
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YAMAGUCHI Eiichi
NTT Electrical Communications Laboratories
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MIKAMI Osamu
NTT Electrical Communications Laboratories
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Okamura Masamichi
Musashino Electrical Communication Laboratory N.t.t.
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Yamaguchi E
Ntt Basic Research Laboratories:imra Europe-centre Scientifique
関連論文
- Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
- Compositional Disordering of In_Ga_As/In_Al_As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
- Si-Induced Disordering of In_Ga_As / In_Al_As Multiquantum Well Structures : Semiconductors and Semiconductor Devices
- Effect of Argon Atmosphere on Self-Absorption of a Spectral Line in Laser Microprobe Analysis
- First Observation of Quantum Hall Effect in InP-MISFET : Semiconductors and Semiconductor Devices
- The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- InGaAsP n-Channel Inversion-Mode MISFET
- Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique
- Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
- Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET
- Discovery of New Photoluminescence Effect Related to Deep Donor Levels in Si-Doped Al_xGa_As and Microstructures
- Compositional Disordering of In_Ga_As/InP Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
- The Origin of the DX Center in Al_xGa_As