The Origin of the DX Center in Al_xGa_<1-x>As

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概要

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• A new microscopic origin of the DX center in Al_xGa_<1-x>As is proposed on the basis of the scattering-theoretic method calculation. Calculated results show that the central cell potential of donors induces the deep levels attributed to the DX center. The theory satisfactorily explains the x- and pressure-dependence of the DX center energy levels in Al_xGa_<1-x>As.

• 社団法人応用物理学会の論文
• 1986-08-20

著者

• YAMAGUCHI Eiichi

  NTT Electrical Communications Laboratories

関連論文

• The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
• The Origin of the DX Center in Al_xGa_As

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