Switching Characteristics of InGaAs/InP Multiquantum Well Voltage-Controlled Bistable Laser Diodes
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概要
- 論文の詳細を見る
Voltage-controlled optical bistability in In_<0.53>Ga_<0.47>As/InP multiquantum well (MQW) laser diodes is demonstrated for the first time by using the quantum confined Stark effect (QCSE) and saturable absorption of a two-dimensional exciton. Optical bistability is obtained in a wide range of control voltages from +0.7 V to -0.6 V. Switching operation is achieved by injecting a set light pulse and applying reverse bias reset voltage to the saturable absorption region. Turn-on time is 300 ps with input light of 6 mW, and turn-off time of 260 ps is obtained by reducing the stray capacitance in the saturable absorption region.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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UENOHARA Hiroyuki
NTT Opto-electronics Laboratories
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IWAMURA Hidetoshi
NTT Opto-electronics Laboratories
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NAGANUMA Mitsuru
NTT Opto-electronics Laboratories
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IWAMURA Hidetoshi
NTT Optc-electronics Laboratories
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