Photoluminescence of InP Doping Superlattice Grown by Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-10-20
著者
-
Mikami Osamu
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
Uwai Kunihiko
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
YAMAUCHI Yoshiharu
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
Yamauchi Yoshiharu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Mikami Osamu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition
- Photoluminescence of InP Doping Superlattice Grown by Vapor Phase Epitaxy
- Anomalous Behavior in an InGaAs/InP Heterojunction Switching Photodiode
- Continuous Growth of High Purity lnP/InGaAs on InP Substrate by Vapor Phase Epitaxy
- Vapor-Phase Epitaxial Growth of InGaAs on (100) InP Substrate
- A Coupled-Waveguide TE/TM Mode Splitter : B-4: OPTOELECTRONIC DEVICES
- Some Experiments on a Voltage-Induced Optical Waveguide in LiNbO_3
- 1.55 μm GaInAsP/InP Distributed Feedback Lasers
- New Image-Rotation Using Moire Lenses
- New Imaging Functions of Moire by Fly's Eye Lenses
- Solitary Spectral Linewidth and Its Reduction with External Grating Feedback for a 1.55 μm InGaAsP BH Laser
- Some Experiments on a Voltage-Induced Optical Waveguide in LiNbO3