Continuous Growth of High Purity lnP/InGaAs on InP Substrate by Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-04-05
著者
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Susa Nobuhiko
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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YAMAUCHI Yoshiharu
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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KANBE Hiroshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Kanbe Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Yamauchi Yoshiharu
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Properties of GaAs/Al_Ga_As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
- Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition
- Photoluminescence of InP Doping Superlattice Grown by Vapor Phase Epitaxy
- Anomalous Behavior in an InGaAs/InP Heterojunction Switching Photodiode
- Continuous Growth of High Purity lnP/InGaAs on InP Substrate by Vapor Phase Epitaxy
- Carrier Density Profiles in Zn- and Cd-Diffused InP
- Plasma Enhanced CVD Si_3N_4 Film Applied to InP Avalanche Photodiodes
- Vapor-Phase Epitaxial Growth of InGaAs on (100) InP Substrate
- An Etchant for InP Native Oxide
- Dark Current Noise Properties of a Germanium Avalanche Photodiode
- Zn Diffusion in In_xGa_As with ZnAs_2 Source
- Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode