Dark Current Noise Properties of a Germanium Avalanche Photodiode

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概要

• 論文の詳細を見る

• Shot noise power caused by a multiplied dark current in a p^+-n Ge avalanche photodiode was measured. The noise power increases as M_p^<3.0> in the low multiplication factor region, where M_p is the multiplication factor for the photocurrent, and has a strong frequency dependence. When the photocurrent multiplication factor saturates, the dark current noise increases rapidly with reverse bias voltage resulting in degradation of signal-to-noise ratio in optical receiver performance.

• 社団法人応用物理学会の論文
• 1980-12-05

著者

• Kanbe Hiroshi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• GROSSKOPF Gerd

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Grosskopf Gerd

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(pre

関連論文

• Anomalous Behavior in an InGaAs/InP Heterojunction Switching Photodiode
• Continuous Growth of High Purity lnP/InGaAs on InP Substrate by Vapor Phase Epitaxy
• Carrier Density Profiles in Zn- and Cd-Diffused InP
• Plasma Enhanced CVD Si_3N_4 Film Applied to InP Avalanche Photodiodes
• Vapor-Phase Epitaxial Growth of InGaAs on (100) InP Substrate
• Dark Current Noise Properties of a Germanium Avalanche Photodiode
• Zn Diffusion in In_xGa_As with ZnAs_2 Source
• Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode

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