Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode
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概要
- 論文の詳細を見る
Breakdown voltage and dark current density in p^+n and n^+p In_<0.53>Ga_<0.47>As diodes are compared with theoretical values taking the backward tunneling current into account. Predominant origin of dark current in an InGaAs diode is attributed to the tunneling current. Using these results, optimum design of an InGaAs/InP avalanche photodiode (APD) to obtain low dark current, high multiplication gain, high quantum efficiency and fast response is also discussed.
- 社団法人応用物理学会の論文
- 1980-06-05
著者
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Ando Hiroaki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kaneda Takao
Fujitsu Laboratories
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Kanbe Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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ANDO Hiroaki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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ITO Masanori
Fujitsu Laboratories
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- Avalanche Built-Up Time of the Germanium Avalanche Photodiode
- Dark Current Noise Properties of a Germanium Avalanche Photodiode
- Zn Diffusion in In_xGa_As with ZnAs_2 Source
- Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode