Chemical Etching of Germanium with H_3PO_4-H_2O_2-H_2O Solution
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-11-20
著者
-
Mikawa Takashi
Fujitsu Laboratories Ltd.
-
Mikawa Takashi
Fujitsu Laboratories Limited
-
KAGAWA Shuzo
Fujitsu Laboratories Limited
-
KANEDA Takao
Fujitsu Laboratories Limited
-
Kaneda Takao
Fujitsu Laboratories
関連論文
- Effect of Alloy Scattering on Electron and Hole Impact Ionization Rates in Ga_In_xAs_yP_ Alloy System
- Analysis of Impact Ionization Phenomena in InP by Monte Carlo Simulation
- The Edge Overgrowth in Selective Deposition of GaAs
- Chemical Etching of Germanium with H_3PO_4-H_2O_2-H_2O Solution
- The Frequency Response of Germanium Avalanche Photodiodes
- Heterojunction Effect on Spectral and Frequency Responses in InP/InGaAsP/InGaAs APD : B-3: NOVEL DEVICES
- Two Step Photoconductive Decay of Ge:Hg Detectors
- The Degeneracy of Hg Level in Ge
- Avalanche Built-Up Time of the Germanium Avalanche Photodiode
- Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode
- Wide-Wavelength InGaAs/InP PIN Photodiodes Sensitive from 0.7 to 1.6 $\mu$m