Wide-Wavelength InGaAs/InP PIN Photodiodes Sensitive from 0.7 to 1.6 $\mu$m

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概要

• 論文の詳細を見る

• We have developed, for the first time, a wide-wavelength InGaAs/InP PIN photodiode for optical communication systems from 0.7- to 1.6-$\mu$m wavelength. The diode has a planar structure with an InP/InGaAs/InP double-hetero epitaxial wafer grown by chloride VPE. To obtain a highsensitivity to 0.7-$\mu$m wavelength light, we introduced a very thin InP cap layer (0.06 $\mu$m) and a shallow pn junction (0.27$\mu$m). Using this structure, we obtained a quantum efficiency of 76% for 0.78-$\mu$m light and 81% for 1.3-$\mu$m light. Dark current and capacitance are only 30 pA and 0.53 pF at 5 V. The frequency response is flat up to 1 GHz above 5 V at 0.78 $\mu$m.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-10-20

著者

• KAGAWA Shuzo

  Fujitsu Laboratories Limited

• Takada Yuji

  Fujitsu Limited, 1015 Nakahara, Kawasaki, Kanagawa 211

• Ogawa Isao

  Fujitsu Limited, 1015 Nakahara, Kawasaki, Kanagawa 211

• Inoue Kouichi

  Fujitsu Limited, 1015 Nakahara, Kawasaki, Kanagawa 211

• Shibata Tomohiro

  Fujitsu Limited, 1015 Nakahara, Kawasaki, Kanagawa 211

関連論文

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• Wide-Wavelength InGaAs/InP PIN Photodiodes Sensitive from 0.7 to 1.6 $\mu$m

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