Zn Diffusion in In_xGa_<1_x>As with ZnAs_2 Source

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概要

• 論文の詳細を見る

• By using ZnAs_2 as a diffusion source, Zn has been diffused into In_xGa_<1_x>As over the whole range of composition x at temperatures between 500℃ and 600℃. The measured activation energy and crystal composition dependence of the diffusion coefficients and Zn surface concentration are compared with the two diffusion models so far proposed and are found to agree with the interstitial (Zn_i^<2+>)-substitutional (Zn_s^-) model. Empirical formulas describing the dependence of junction depth, hole concentration, hole mobility and diffused layer resistivity on crystal composition x, diffusion time t and temperature T are derived. Planar photodiodes, fabricated by preferential Zn diffusion in In_xGa_<1_x>As VPE layers, exhibit microplasma-free uniform breakdown with higher breakdown voltage than 100 V, low junction capacitance of 0.24 pF for 100 μm diameter and low dark current density of 10^<-6> to 10^<-5> A/cm^2.

• 社団法人応用物理学会の論文
• 1980-01-05

著者

• Kanbe Hiroshi

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

• YAMAMOTO Yoshihisa

  Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Yamamoto Y

  Department Of Pharmaceutics And Biopharmaceutics Showa Pharmaceutical University

• Yamamoto Yoshihisa

  Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation

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• Plasma Enhanced CVD Si_3N_4 Film Applied to InP Avalanche Photodiodes
• Vapor-Phase Epitaxial Growth of InGaAs on (100) InP Substrate
• Dark Current Noise Properties of a Germanium Avalanche Photodiode
• Zn Diffusion in In_xGa_As with ZnAs_2 Source
• Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode

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