Properties of GaAs/Al_<0.53>Ga_<0.47>As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-03-20
著者
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
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Susa N
Musashino Electrical Communications Lab. Tokyo
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Susa Nobuhiko
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Properties of GaAs/Al_Ga_As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
- Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
- Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition
- Comparison between GaAs and Al_xGa_As Quantum Wells in the Light Emission Limit
- Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy
- Si and Sn Doping in Al_xGa_As Grown by MBE
- Anomalous Behavior in an InGaAs/InP Heterojunction Switching Photodiode
- Continuous Growth of High Purity lnP/InGaAs on InP Substrate by Vapor Phase Epitaxy
- Carrier Density Profiles in Zn- and Cd-Diffused InP
- Plasma Enhanced CVD Si_3N_4 Film Applied to InP Avalanche Photodiodes
- Vapor-Phase Epitaxial Growth of InGaAs on (100) InP Substrate
- Near Room Temperature CW Operation at 1.70 μm of MBE Grown InGaAs/InP DH Lasers
- Properties of Molecular Beam Epitaxial In_xGa_As (X≈0.53) Layers Grown on InP Substrates
- Excitonic Absorption Spectra of GaAs-AlAs Superlattice at High Temperature
- AlSb-GaSb and AlAs-GaAs Monolayer Superlattices Grown by Molecular Beam Epitaxy
- An Etchant for InP Native Oxide
- Surface Defects on MBE-Grown GaAs
- Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
- Some Design Considerations for Multi-Quantum-Well Lasers
- Optical Absorption of GaAs-AlGaAs Superlattice under Electric Field
- Photoluminescence of an AlAs/GaAs Superlattice Grown by MBE in the 0.7-0.8 μm Wavelength Region