OKAMOTO Hiroshi | Musashino Electrical Communication Laboratory,NTT
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概要
関連著者
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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TARUCHA Seigo
Musashino Electrical Communication Laboratory,NTT
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Tarucha Seigo
Musashino Electrical Communication Laboratory Ntt
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Tarucha S
Ntt Basic Res. Lab. Kanagawa Jpn
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Tarucha Seigo
Ntt Basic Research Laboratories Ntt Corporation
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Tarucha Seigo
Ntt Basic Research Laboratories:department Of Physics University Of Tokyo
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Tarucha S
Ntt Basic Research Laboratories Ntt Corporation
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Tarucha Seigo
Ntt Electrical Communications Laboratories
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Iwamura Hidetoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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HORIKOSHI Yoshiji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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IWAMURA Hidetoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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SAKU Tadashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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SAKU Tadashi
NTT Basic Research Laboratories
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Saku T
Ntt Basic Res. Lab. Kanagawa Jpn
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Iwamura H
Ntt Opto-electronics Laboratories
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Hirayama Yoshiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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岡本 宏巳
Department Of Pharmacology Faculty Of Pharmaceutical Sciences Kobe Gakuin University
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Seki Masahiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kawamura Yuichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kawamura Yuichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corpolation
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Kobayashi Hideki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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OHMORI Yutaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Asahi Hajime
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ohmori Yutaka
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Hirayama Y
Ntt Corp. Kanagawa Jpn
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Suzuki Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegragh And Telephone Public Corporation
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IKEDA Mutsuo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Ikeda Mutsuo
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Ntt
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Kobayashi Hideki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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ARAKAWA Yasuhiko
Institute of Industrial Science, Research Center for Advanced Science and Technology, and Nanoelectr
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NISHIOKA Masao
Institute of Industrial Science, University of Tokyo
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MIURA Noboru
Institute for Solid State Physics,University of Tokyo
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Masumoto Y
The Institute For Solid State Physics The University Of Tokyo
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MASUMOTO Yasuaki
The Institute for Solid State Physics,The University of Tokyo
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HIRAYAMA Yoshiro
NTT Basic Research Laboratories, NTT Corporation
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Miura Noboru
Institute For Solid State Physics University Of Tokyo
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Miura Noboru
Instilute For Solid State Physics University Of Tokyo
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics The University Of Tokyo
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SAKAKI Hiroyuki
Institute of Industrial Science,University of Tokyo
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GOLDSTEIN Leon
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Goldstein Leon
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(pre
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Masumoto Yasuaki
The Institute For Solid State Physics The University Of Tokyo
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Susa N
Musashino Electrical Communications Lab. Tokyo
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Susa Nobuhiko
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nishioka Masao
Institute Of Industrial Science University Of Tokyo
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SUZUKI Yoshifumi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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ISHIBASHI Tadao
Musashino Electrical Communication Laboratory, NTT
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Sakaki Hiroyuki
Institute Of Industrial Science University Of Tokyo
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Ishibashi Tadao
Musashino Electrical Communication Laboratory Nippon Telegragh And Telephone Public Corporation
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Ishibashi Tadao
Musashino Electrical Communication Laboratory Ntt
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Hirayama Y
Ntt Basic Research Laboratories Ntt Corporation
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Kroemer Herbert
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:depa
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics And Institute Of Industrial Science The Universit
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Sakaki Hiroyuki
Institute Of Industrial Science The University Of Tokyo
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Suzuki Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Arakawa Yasuhiko
Institute For Nano Quantum Information Electronics (nanoquine) The University Of Tokyo
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SAKU Tadashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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IWAMURA Hidetoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
著作論文
- Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures
- Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Properties of GaAs/Al_Ga_As Avalanche Photodiode with Superlattice Fabricated by Molecular Beam Epitaxy
- Spontaneous Emission Characteristics of Quantum Well Lasers in Strong Magnetic Fields : An Approach to Quantum-Well-Box Light Source
- Comparison between GaAs and Al_xGa_As Quantum Wells in the Light Emission Limit
- Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy
- Si and Sn Doping in Al_xGa_As Grown by MBE
- Near Room Temperature CW Operation at 1.70 μm of MBE Grown InGaAs/InP DH Lasers
- Properties of Molecular Beam Epitaxial In_xGa_As (X≈0.53) Layers Grown on InP Substrates
- Excitonic Absorption Spectra of GaAs-AlAs Superlattice at High Temperature
- AlSb-GaSb and AlAs-GaAs Monolayer Superlattices Grown by Molecular Beam Epitaxy
- Surface Defects on MBE-Grown GaAs
- Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
- Some Design Considerations for Multi-Quantum-Well Lasers
- Optical Absorption of GaAs-AlGaAs Superlattice under Electric Field