Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
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概要
- 論文の詳細を見る
Observation is made of a cross section including the growth direction of an MBE grown GaAs-Al_<0.28>Ga_<0.72>As superlattice structure by a transmission electron microscope with a resolution of 1.4 Å. Relevant atoms are observed to be regularly aligned even across the heterointerface. There is no alloy clustering observed in the ternary alloy layer. Dislocation is clearly observed as a local disorder in lattice alignment for the first time in the MBE grown layer.
- 社団法人応用物理学会の論文
- 1983-06-20
著者
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
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Seki Masahiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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