Low Threshold PbSnSeTe-PbSeTe Lattice-Matched Double-Heterostructure Lasers
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概要
- 論文の詳細を見る
Very low threshold current density lasers with an 11 μm emission wavelength at 4.2 K have been fabricated from the lattice-matched Pb_<0.85>Sn_<0.15>Se_<0.02>Te_<0.98>-PbSe_<0.08>Te_<0.92> DH wafers grown by liquid phase epitaxy on a Pb_<0.8>Sn_<0.2>Te substrate. The active layer thickness, which minimizes the threshold current density, has been determined to be about 1 μm from the calculated optical confinement factors assuming a linear gain-current relationship. Lasers with a 1 μm active layer thickness and a 500 μm cavity length exhibited threshold current densities as low as 65 A/cm^2 at 4.2 K and 350 A/cm^2 at 77 K. The measured internal optical loss was as low as2.8 cm^<-1> at 4.2 K.
- 社団法人応用物理学会の論文
- 1981-12-05
著者
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Saito Hisao
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Kawashima Minoru
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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