Effect of Impurity Diffusion on the Characteristics of Avalanche Photodiode
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概要
- 論文の詳細を見る
The characteristics of InP APDs fabricated by cadmium and zinc diffusion have been investigated. The Cd-diffused InP APD exhibited an avalanche gain in excess of 10^3, whereas the Zn-diffused InP APD exhibited prebreakdown phenomena with an avalanche gain as low as 2. This result has been correlated to the difference in the diffusion front shapes between these impurities in InP.
- 社団法人応用物理学会の論文
- 1980-04-05
著者
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t
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