Ionization Coefficient of InGaAsP/InP APD
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-11-05
著者
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TAKANASHI Yoshifumi
Musashino Electrical Communication Laboratory, N.T.T.
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t
関連論文
- InGaAsP/InP Avalanche Photodiode Prepared by Zn-Diffusion
- Simultaneous Diffusion of Zinc and Cadmium into InAs
- Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
- Analysis of Dark Currents and Minimum Detectable Powers for InGaAsP Optical Receivers
- Reduction of Quantum Noise in Very Narrow Planar Stripe Lasers
- Effect of Impurities on the Quantum Shot Noise Resonance in Double-Heterostructure Lasers
- Effect of Impurities on Relaxation Oscillation of Double-Heterostructure Lasers
- Ionization Coefficient of InGaAsP/InP APD
- InGaAsP/InP Avalanche Photodiode
- Temperature Dependence of Ionization Coefficients for InP and 1.3 μm InGaAsP Avalanche Photodiodes
- Noise Performance of 1.3 μm InGaAsP Avalanche Photodiode at -190℃
- Effect of Impurity Diffusion on the Characteristics of Avalanche Photodiode