Noise Performance of 1.3 μm InGaAsP Avalanche Photodiode at -190℃
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概要
- 論文の詳細を見る
The direct measurement of the noise performance for InGaAsP APD has for the first time been made at -190℃. The shot noise power measured at λ=0.633 μm varied as M^<2.5> with avalanche multiplication M and the excess noise factor F(M) at M= 10 was 3.5. Multiplication of 360 was obtained for the initial photocurrent of 2 μA. The effective ratio of hole-to-electron ionization coefficients at this temperature was estimated to be 0.05 from McIntyre's equation. It has been found that the characteristics of InGaAsP APDs are remarkably improved by decreasing the operation temperature. Therefore, applying cooled InGaAsP APDs to the low loss optical fiber transmission systems seems to be advantageous
- 社団法人応用物理学会の論文
- 1980-03-05
著者
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory N.t.t.
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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TAKANASHI Yoshifumi
Musashino Electrical Communication Laboratory, N.T.T.
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t.
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t
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HORIKOSHI Yoshiji
Musashino Electrical Communication Laboratory, N.T.T.
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