Anomalous Luminescence near the InGaAsP-InP Heterojunction Interface
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概要
- 論文の詳細を見る
Electroluminescence and photoluminescence of InGaAsP in InGaAsP-InP double heterostructure wafers were investigated in connection with the distance from the heteroepitaxial interface. A sharp electroluminescence spectrum was obtained when the p-n junction was located at the InGaAsP/InP interface. On the other hand, broad emission was observed for the p-n junction located at the InP/InGaAsP interface. In the photoluminescence of InGaAsP measured at 4.2 K, strong, deep level emission was observed in the vicinity of the InP/InGaAsP interface. This phenomenon seems to be responsible for the broad electroluminescence spectrum.
- 社団法人応用物理学会の論文
- 1979-05-05
著者
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Fukui Takashi
Musashino Electrical Communication Laboratories N.t.t.
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