Taper Growth of GaAs-AlGaAs Layers by Wipingless LPE
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-06-05
著者
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Fukui Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Wakita Koichi
Musashino Electrical Communication Laboratory N. T. T.
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Wakita Koichi
Musashino Electrical Communiccltion Laboratory Nippon Telegraphand Telephone Public Corporation
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H0RIK0SH Yoshiji
Musashino Electrical Communiccltion Laboratory, Nippon Telegraphand Telephone Public Corporation
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H0rik0sh Yoshiji
Musashino Electrical Communiccltion Laboratory Nippon Telegraphand Telephone Public Corporation
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Fukui Takashi
Musashino Electrical Communication Laboratories N.t.t.
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Fukui Takashi
Musashino Electrical Communiccltion Laboratory Nippon Telegraphand Telephone Public Corporation
関連論文
- Longitudinal Magnetophonon Resonance in n-Type InP in Ohmic and Hot Electron Region
- Magnentophonon Resonance in Epitaxial n-Inp in High Pulsed Magnetic Fields
- Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition
- Organometallic VPE Growth of InAs_Sb_xP_y on InAs
- Calculation of Bond Length in Ga_In_xAs Ternary Semiconductors
- The Stability of Coating Film-Mirror Facet Interfaces of AlGaAs/GaAs DH Laser Diodes
- (InAs)_1(GaAs)_1 Layered Crystal Grown by MOCVD
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Degradation of InGaAsP/InP DH Lasers in Water due to Facet Deterioration
- Degradation in GaAs/AlGaAs DH Lasers under Ar Laser Irradiation
- Relation between Degradation Rate and Photocurrent in GaAs/AlGaAs DH Lasers
- Degradation of (GaAl)As-GaAs DH Lasers in Water due to Facet Deterioration
- Self-Sustained Pulsation Appearance in InGaAsP/InP DH Lasers during Accelerated Operation
- Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation
- Life Test of GaAs DH Lasers at Room Temperature
- Taper Growth of GaAs-AlGaAs Layers by Wipingless LPE
- (InAs)_1(GaAs)_1 Layered Crystal Grown on (100)InP by MOCVD
- Organometallic VPE Growth of InAs
- Field Effect of InP Photoluminescence in InP-Electrolyte Structure
- Anomalous Luminescence near the InGaAsP-InP Heterojunction Interface
- Properties of InP Films Grown by Organometallic VPE Method
- Comparison between Atmospheric and Reduced Pressure GaAs MOCVD
- Organometallic VPE Growth of InAs_Sb_x on InAs
- Effect of Impurities on the Surface Morphology of LPE-Grown InGaAsP and InP
- InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
- Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD
- Baking Effect on the Surface Morphology of GaAs-AlGaAs LPE
- Optically Induced Low Photoluminescence Regions in InGaAsP