Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation
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概要
- 論文の詳細を見る
Generation and development of <100> dark line and dark spot defects (DLD/DSDs), and related increases in room temperature pulse threshold current are investigated on InGaAsP/InP double heterostructure (DH) lasers under 10 kA/cm^2 forward current density and (250±25)℃ junction temperature operation. The average development speed of <100> DLDs is estimated to be about 0.3 μm/h. Temperature rise is confirmed at DSDs with an infrared thermometer. These dark defects have geometrical correlation with etch pit features in the InGaAsP/InP heteroboundary. They are considered to be developed by carrier injection.
- 社団法人応用物理学会の論文
- 1981-02-05
著者
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Wakita Koichi
Musashino Electrical Communication Laboratory N.t.t.
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Wakita Koichi
Musashino Electrical Communication Laboratory N. T. T.
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IWANE Genzo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Iwane Genzo
Musashino Electrical Communication Laboratory N.t.t.
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Iwane Genzo
Musashino Electrical Communication Laboratory N. T. T.
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Fukuda Mitsuo
Musashino Electrical Communication Laboratory N.t.t.
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FUKUDA Mitsuo
Musashino Electrical Communication Laboratory, N.T.T.
関連論文
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- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
- The Stability of Coating Film-Mirror Facet Interfaces of AlGaAs/GaAs DH Laser Diodes
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Degradation of InGaAsP/InP DH Lasers in Water due to Facet Deterioration
- Degradation in GaAs/AlGaAs DH Lasers under Ar Laser Irradiation
- Relation between Degradation Rate and Photocurrent in GaAs/AlGaAs DH Lasers
- Degradation of (GaAl)As-GaAs DH Lasers in Water due to Facet Deterioration
- Self-Sustained Pulsation Appearance in InGaAsP/InP DH Lasers during Accelerated Operation
- Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation
- Life Test of GaAs DH Lasers at Room Temperature
- Taper Growth of GaAs-AlGaAs Layers by Wipingless LPE
- Three Dimensional Thermal Problems of Double-Heterostructure Semiconductor Lasers