Relation between Degradation Rate and Photocurrent in GaAs/AlGaAs DH Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-12-05
著者
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Nakano Yoshinori
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nakano Yoshinori
Musashino Electrical Communication Laboratory N.t.t.
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Wakita Koichi
Musashino Electrical Communication Laboratory N.t.t.
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Wakita Koichi
Musashino Electrical Communication Laboratory N. T. T.
関連論文
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- The Stability of Coating Film-Mirror Facet Interfaces of AlGaAs/GaAs DH Laser Diodes
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Degradation of InGaAsP/InP DH Lasers in Water due to Facet Deterioration
- Degradation in GaAs/AlGaAs DH Lasers under Ar Laser Irradiation
- Relation between Degradation Rate and Photocurrent in GaAs/AlGaAs DH Lasers
- Degradation of (GaAl)As-GaAs DH Lasers in Water due to Facet Deterioration
- Self-Sustained Pulsation Appearance in InGaAsP/InP DH Lasers during Accelerated Operation
- Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation
- Life Test of GaAs DH Lasers at Room Temperature
- Contact Resistance Dependence on InGaAsP Layers Lattice-Matched to InP
- Taper Growth of GaAs-AlGaAs Layers by Wipingless LPE