Contact Resistance Dependence on InGaAsP Layers Lattice-Matched to InP
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概要
- 論文の詳細を見る
The effect of composition on the contact resistance between AuZn alloy and p-type InGaAsP layers lattice-matched to InP has been investigated and it was found that a lower contact resistance could be obtained by decreasing the energy gap of the quaternary layer. This fact can be explained in terms of carrier tunnelling as a current transport mechanism.
- 社団法人応用物理学会の論文
- 1980-08-05
著者
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Takahashi Shin-ichi
Musashino Electrical Communication Laboratory Ntt Musashino-shi
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Takahashi Shin-ichi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nakano Yoshinori
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Nakano Yoshinori
Musashino Electrical Communication Laboratory N.t.t.
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TOYOSHIMA Yoshio
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Toyoshima Yoshio
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 μm Region
- Optically Induced Reversible Change in Amorphous Semiconductors
- Degradation in GaAs/AlGaAs DH Lasers under Ar Laser Irradiation
- Relation between Degradation Rate and Photocurrent in GaAs/AlGaAs DH Lasers
- Contact Resistance Dependence on InGaAsP Layers Lattice-Matched to InP
- Impurity Effect on Interface Morphology of AlGaAs LPE on Corrugated GaAs Substrates