Degradation of InGaAsP/InP DH Lasers in Water due to Facet Deterioration
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概要
- 論文の詳細を見る
The stability of InGaAsP/InP DH lasers has been investigated in water and mirror facet oxidation has been confirmed by Auger sputtering analysis. The pulse threshold current increasing rate for InGaAsP/InP lasers is about two orders of magnitude smaller than that for AlGaAs/GaAs lasers under both storage and pulsc operation tests in water. The facet degradation has not been enhanced by light output power, but rather is enhanced by the active layer temperature rise due to carrier injection.
- 社団法人応用物理学会の論文
- 1980-11-05
著者
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Wakita Koichi
Musashino Electrical Communication Laboratory N.t.t.
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Wakita Koichi
Musashino Electrical Communication Laboratory N. T. T.
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Fukuda Mitsuo
Musashino Electrical Communication Laboratory N.t.t.
関連論文
- The Stability of Coating Film-Mirror Facet Interfaces of AlGaAs/GaAs DH Laser Diodes
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Degradation of InGaAsP/InP DH Lasers in Water due to Facet Deterioration
- Degradation in GaAs/AlGaAs DH Lasers under Ar Laser Irradiation
- Relation between Degradation Rate and Photocurrent in GaAs/AlGaAs DH Lasers
- Degradation of (GaAl)As-GaAs DH Lasers in Water due to Facet Deterioration
- Self-Sustained Pulsation Appearance in InGaAsP/InP DH Lasers during Accelerated Operation
- Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation
- Life Test of GaAs DH Lasers at Room Temperature
- Taper Growth of GaAs-AlGaAs Layers by Wipingless LPE