Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1976-10-05
著者
-
FUKUI Takashi
Musashino Electrical Communication Laboratory,NTT
-
HORIKOSHI Yoshiji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
-
Fukui Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Furukawa Yoshitaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
Furukawa Yoshitaka
Musashino Electrical Communication Laboratory N. T. T.
-
Furukawa Yoshitaka
Musashino Electrical Communication Laboratory
-
Wakita Koichi
Musashino Electrical Communication Laboratory N.t.t.
-
Wakita Koichi
Musashino Electrical Communication Laboratory N. T. T.
-
Horikoshi Yoshiji
Musashino Electrical Communication Laboratory N. T. T.
-
Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Fukui Takashi
Musashino Electrical Communication Laboratories N.t.t.
-
WAKITA Koichi
Musashino Electrical Communication Laboratory, N. T. T.
関連論文
- Longitudinal Magnetophonon Resonance in n-Type InP in Ohmic and Hot Electron Region
- Magnentophonon Resonance in Epitaxial n-Inp in High Pulsed Magnetic Fields
- Polarized-Neutron Study of NiS_2
- Spin Structure and Magnetic Properties of NiS_2
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- Chemical Vapor Deposition and Characterization of a Phosphorus-Nitride (P_3N_5) Gate Insulator for an Inversion-Mode InP MISFET : B-6: III-V DEVICE TECHNOLOGY
- Current Drift Phenomena and Spectroscopic Measurement Method for Insulator Trap Level Parameters in InP MISFETs
- Semiconductor Materials for 2〜4μm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers : SOLID SOLUTIONS
- Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 μm Wavelength
- Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
- Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition
- InGaAs/InGaAsP Avalanche Photodiodes and Analysis of Internal Quantum Efficiency
- Required Donor Density of Epitaxial Layers for Al_xGa_Sb Avalanche Photodiodes
- Organometallic VPE Growth of InAs_Sb_xP_y on InAs
- Calculation of Bond Length in Ga_In_xAs Ternary Semiconductors
- The Stability of Coating Film-Mirror Facet Interfaces of AlGaAs/GaAs DH Laser Diodes
- (InAs)_1(GaAs)_1 Layered Crystal Grown by MOCVD
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide
- GaAs-AlGaAs DH Lasers with Buried Facet
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Degradation of InGaAsP/InP DH Lasers in Water due to Facet Deterioration
- Degradation in GaAs/AlGaAs DH Lasers under Ar Laser Irradiation
- Relation between Degradation Rate and Photocurrent in GaAs/AlGaAs DH Lasers
- Degradation of (GaAl)As-GaAs DH Lasers in Water due to Facet Deterioration
- Self-Sustained Pulsation Appearance in InGaAsP/InP DH Lasers during Accelerated Operation
- Observation of Dark Defects Related to Degradation in InGaAsP/InP DH Lasers under Accelerated Operation
- Life Test of GaAs DH Lasers at Room Temperature
- Analysis of Dynamical Effects on Geometric Phase by Means of Time-Dependent Variational Principle : Nuclear Physics
- Lifetime of InGaAsP-InP and AlGaAs-GaAs DH Lasers Estimated by the Point Defect Generation Model
- Surface Defects on MBE-Grown GaAs
- Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
- InGaAsP/InP Avalanche Photodiode Prepared by Zn-Diffusion
- Evidence of Total Reflection Mode Oscillation in PbSnSeTe-PbSeTe Double-Heterostructure Lasers
- PbSnSeTe-PbSeTe Lattice-Matched Double-Heterostructure Lasers
- Low Threshold PbSnSeTe-PbSeTe Lattice-Matched Double-Heterostructure Lasers
- Simultaneous Diffusion of Zinc and Cadmium into InAs
- Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
- Analysis of Dark Currents and Minimum Detectable Powers for InGaAsP Optical Receivers
- Liquid Phase Epitaxial Growth of In_Ga_xAs_Sb_y with InAs Enriched Composition on InAs Substrate
- Liquid Phase Epitaxial Growth of InAs_P_xSb_y on InAs Substrate
- Taper Growth of GaAs-AlGaAs Layers by Wipingless LPE
- (InAs)_1(GaAs)_1 Layered Crystal Grown on (100)InP by MOCVD
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure Lasers
- Organometallic VPE Growth of InAs
- Field Effect of InP Photoluminescence in InP-Electrolyte Structure
- Optical Absorption at Dark Lines in Degraded Double-Heterostructure Lasers
- Reduction of Quantum Noise in Very Narrow Planar Stripe Lasers
- Effect of Impurities on the Quantum Shot Noise Resonance in Double-Heterostructure Lasers
- Effect of Impurities on Relaxation Oscillation of Double-Heterostructure Lasers
- Dependence of Net Gain of Buried Laser on Mirror Loss
- Chemical Vapor Deposition of Phosphorus Nitride and Related Compounds
- Application of InGaAsP and AlGaAsSb for Optical Fiber Transmission : SOLID SOLUTIONS
- Anomalous Luminescence near the InGaAsP-InP Heterojunction Interface
- Properties of InP Films Grown by Organometallic VPE Method
- Comparison between Atmospheric and Reduced Pressure GaAs MOCVD
- Organometallic VPE Growth of InAs_Sb_x on InAs
- Effect of Impurities on the Surface Morphology of LPE-Grown InGaAsP and InP
- InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
- Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD
- Baking Effect on the Surface Morphology of GaAs-AlGaAs LPE
- Optically Induced Low Photoluminescence Regions in InGaAsP
- InGaAsP/InP Avalanche Photodiode
- Temperature Dependence of Ionization Coefficients for InP and 1.3 μm InGaAsP Avalanche Photodiodes
- Noise Performance of 1.3 μm InGaAsP Avalanche Photodiode at -190℃
- On the Extra Phase Accompanying Berry's Phase in Terms of Coherent State Path Integral : Nuclear Physics
- Dark Line Loss in Degraded Double-Heterostructure Lasers
- Interdiffusion of Al and Ga in Si-Implanted GaAs-AlAs Superlattices
- Lasing Characteristics of Very Narrow Planar Stripe Lasers
- DH Lasers Fabricated by New III-V Semiconductor Material InAsPSb
- 1.5μm InGaAsP/InP DH Laser with Optical Waveguide Structure
- Pseudoquaternary Phase Diagram Calculation of In_ Ga_xAs_Sb_y Quaternary System
- Effect of Impurity Diffusion on the Characteristics of Avalanche Photodiode
- InP MIS Diodes Prepared by Anodic Oxidation
- Effect of Temperature Fluctuations on the Surface Terraces of GaAs-AlGaAs Double Hetero Structure Wafers
- GaAs Core Embedded in Al_xGa_As Matrix