GaAs-AlGaAs DH Lasers with Buried Facet
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1978-05-05
著者
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Takahashi Shin-cihi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Saito Hisao
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Saito Hisao
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory
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KOBAYASHI Takeshi
Musashino Electrical Communication Laboratory, N.T.T.
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Kobayashi Takeshi
Musashino Electrical Communication Laboratory N.t.t.
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Kobayashi Takeshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Takeshi
Musashino Electrical Communication Laboratories N.t.t.
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- GaAs-AlGaAs DH Lasers with Buried Facet
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- (InAs)_1(GaAs)_1 Layered Crystal Grown on (100)InP by MOCVD
- Thermal Diagnosis of Dark lines in Degraded GaAs-AlGaAs Double-Heterostructure Lasers
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