Low-Temperature Behavior of the Threshold Current and Carrier Lifetime of InGaAsP-InP DH Lasers
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-08-05
著者
-
Horikoshi Yoshiji
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
-
Saito Hisao
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
-
Saito Hisao
The Musashino Electrical Communication Laboratory
-
Kawashima Minoru
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
-
HORIKOSHI Yoshiji
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
KAWASHIMA Minoru
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
TAKANASHI Yoshifumi
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t.
-
Takanashi Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Takanashi Yoshifumi
The Musashino Electrical Communication Laboratory N.t.t.
-
Horikoshi Yoshiji
The Musashino Electrical Communication Laboratory
関連論文
- (InAs)_1(GaAs)_1 Layered Crystal Grown by MOCVD
- GaAs-AlGaAs DH Lasers with Buried Facet
- GaAsSb-AlGaAsSb Double Heterojunvtion Lasers
- Evidence of Total Reflection Mode Oscillation in PbSnSeTe-PbSeTe Double-Heterostructure Lasers
- PbSnSeTe-PbSeTe Lattice-Matched Double-Heterostructure Lasers
- Low Threshold PbSnSeTe-PbSeTe Lattice-Matched Double-Heterostructure Lasers
- Simultaneous Diffusion of Zinc and Cadmium into InAs
- Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
- Low-Temperature Behavior of the Threshold Current and Carrier Lifetime of InGaAsP-InP DH Lasers
- Degradation of InGaAsP-InP DH Lasers by In Solder
- (InAs)_1(GaAs)_1 Layered Crystal Grown on (100)InP by MOCVD
- Improved Sensitivity of Junction Capacitance Method Suitable for the Trap Evaluation in Stripe Geometry DH Lasers
- Noise Performance of 1.3 μm InGaAsP Avalanche Photodiode at -190℃
- Effect of the Thermal Damage Introduced to GaAs Substrate during the GaAs, (AlGa)As LPE Process
- Epitaxial Growth of (AIGa)As and GaAs on (AlGa)As Substrate
- Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers
- Efficient Coupling between Chalcogenide Glass Radiator Bonded LEDs with Optical Guide Structure and Optical Fibers
- High Radiance Light-Emitting Diodes
- A New Liquid Phase Epitaxial Growth Method for the Growth of (AlGa)As, GaAs Multilayers
- Field Effect of GaAs Photoluminescence in the GaP-GaAs and Ga_Al_As-GaAs Heterojunctions