Improved Sensitivity of Junction Capacitance Method Suitable for the Trap Evaluation in Stripe Geometry DH Lasers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1976-06-05

著者

• HORIKOSHI Yoshiji

  The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Takanashi Yoshifumi

  The Musashino Electrical Communication Laboratory N.t.t.

• Horikoshi Yoshiji

  The Musashino Electrical Communication Laboratory

関連論文

• Low-Temperature Behavior of the Threshold Current and Carrier Lifetime of InGaAsP-InP DH Lasers
• Degradation of InGaAsP-InP DH Lasers by In Solder
• Improved Sensitivity of Junction Capacitance Method Suitable for the Trap Evaluation in Stripe Geometry DH Lasers
• Effect of the Thermal Damage Introduced to GaAs Substrate during the GaAs, (AlGa)As LPE Process
• Epitaxial Growth of (AIGa)As and GaAs on (AlGa)As Substrate
• Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers
• Efficient Coupling between Chalcogenide Glass Radiator Bonded LEDs with Optical Guide Structure and Optical Fibers
• High Radiance Light-Emitting Diodes
• A New Liquid Phase Epitaxial Growth Method for the Growth of (AlGa)As, GaAs Multilayers
• Field Effect of GaAs Photoluminescence in the GaP-GaAs and Ga_Al_As-GaAs Heterojunctions

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