Epitaxial Growth of (AIGa)As and GaAs on (AlGa)As Substrate
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概要
- 論文の詳細を見る
(AlGa)As and GaAs were grown on (AlGa)As substrates by a new liquid phase epitaxial(LPE) technique. In this new technique, a small amount of GaCl was added to hydrogen atmosphere in which the epitaxial growth was carried out. The experimental results suggest that native oxide formed on the surface of substrates is removed by the presence of GaCl. Thus the LPE growth on (AlGa)As surface become possible.The characteristics of the PN junction composed of n-Al(_0.4Ga_1.6As substrate and p-Al_0.4-Ga_0.6As epitaxial layer were measured. Although intense broad band emission related with deep levels was observed in the electroluminescence spectrum, the characteristics such as V-I,C-V, and photocurrent spectrum show that the quality of the PN junction is fairly good.
- 社団法人応用物理学会の論文
- 1975-11-05
著者
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HORIKOSHI Yoshiji
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Furukawa Yoshitaka
The Musashino Electrical Communication Laboratory N.t.t.
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Horikoshi Yoshiji
The Musashino Electrical Communication Laboratory N.t.t.
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Horikoshi Yoshiji
The Musashino Electrical Communication Laboratory
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FURUKAWA Yoshitaka
The Musashino Electrical Communication Laboratory,N.T.T.,
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