Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers
スポンサーリンク
概要
- 論文の詳細を見る
The threshold current of InGaAsP-InP double hetetostructure lasers has been investigated through measurements of the temperature dependence of carrier lifetime and radiative efficiency. Both the carrier lifetime and the radiative efficiency decrease noticeably above the break point temperature as observed in the I_<th> vs. T relation. The decrease of the carrier lifetime is explained by considering additional non-radiative recombination centers with 0.3 eV activation energy. The origin of this center is also discussed.
- 社団法人応用物理学会の論文
- 1979-04-05
著者
-
HORIKOSHI Yoshiji
The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
Furukawa Yoshitaka
The Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Furukawa Yoshitaka
The Musashino Electrical Communication Laboratory N.t.t.
-
Horikoshi Yoshiji
The Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
-
Horikoshi Yoshiji
The Musashino Electrical Communication Laboratory N.t.t.
-
Horikoshi Yoshiji
The Musashino Electrical Communication Laboratory
関連論文
- Low-Temperature Behavior of the Threshold Current and Carrier Lifetime of InGaAsP-InP DH Lasers
- Degradation of InGaAsP-InP DH Lasers by In Solder
- Improved Sensitivity of Junction Capacitance Method Suitable for the Trap Evaluation in Stripe Geometry DH Lasers
- Effect of the Thermal Damage Introduced to GaAs Substrate during the GaAs, (AlGa)As LPE Process
- Epitaxial Growth of (AIGa)As and GaAs on (AlGa)As Substrate
- Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers
- Efficient Coupling between Chalcogenide Glass Radiator Bonded LEDs with Optical Guide Structure and Optical Fibers
- High Radiance Light-Emitting Diodes
- A New Liquid Phase Epitaxial Growth Method for the Growth of (AlGa)As, GaAs Multilayers
- Field Effect of GaAs Photoluminescence in the GaP-GaAs and Ga_Al_As-GaAs Heterojunctions
- Temperature Distributions in the GaAs-AlGaAs Double-Heterostructure Laser below and above the Threshold Current