Temperature Distributions in the GaAs-AlGaAs Double-Heterostructure Laser below and above the Threshold Current

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概要

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• The temperature distribution in the double-heterostructure laser under cw operation was observed directly. The temperature distribution above the threshold differs from that below the threshold ; that is, the narrowing of the distribution around the active region was observed above the threshold. This means that the heat source is concentrated at the active region when the diode lases. The dependence of the temperature rise on the differential quantum efficiency was also observed. These results can be understood qualitatively by assuming a change in thespatial distribution of the heat source in the double-heterostructure laser below and above the threshold.

• 社団法人応用物理学会の論文
• 1975-12-05

著者

• Furukawa Yoshitaka

  The Musashino Electrical Communication Laboratory N.t.t.

• Kobayashi Takeshi

  The Musashino Electrical Communication Laboratory N.t.t.

関連論文

• Epitaxial Growth of (AIGa)As and GaAs on (AlGa)As Substrate
• Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers
• Field Effect of GaAs Photoluminescence in the GaP-GaAs and Ga_Al_As-GaAs Heterojunctions
• Temperature Distributions in the GaAs-AlGaAs Double-Heterostructure Laser below and above the Threshold Current

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