Field Effect of GaAs Photoluminescence in the GaP-GaAs and Ga_<0.3>Al_<0.7>As-GaAs Heterojunctions
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概要
- 論文の詳細を見る
GaAs was excited with a He-Ne laser through a GaP window of the GaP-GaAs heterojunctions. The photoluminescence intensity depends on the applied voltages. Photoexcited carriers in the depletion layer which extends into n-type GaAs do not contribute to the photoluminescence, so that the photoluminescence is quenched when the diodes are reverse biased. The same phenomenon was observed for the Ga_<0.3>Al_<0.7>As-GaAs heterojunctions at a relatively low excitation level.
- 社団法人応用物理学会の論文
- 1972-09-05
著者
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Furukawa Yoshitaka
The Musashino Electrical Communication Laboratory N.t.t.
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Horikoshi Yoshiji
The Musashino Electrical Communication Laboratory N.t.t.
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Horikoshi Yoshiji
The Musashino Electrical Communication Laboratory
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