Effect of the Thermal Damage Introduced to GaAs Substrate during the GaAs, (AlGa)As LPE Process

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概要

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• The effect of thermal damage introduced to the substrate surface during the LPE process was studied by photoluminescence (PL) observation at each step of the progressive etching of the epitaxial layers. There were many dark spots and dark regions on the substrate caused by the thermal damages. Most of them were not correlated with dark spots on the epitaxial layers. However, some of them were correlated with those on. the epitaxial layers. The experimental result suggests that some threading dislocations of the epitaxial layers are originated at the damaged substrate surface.

• 社団法人応用物理学会の論文
• 1976-05-05

著者

• HORIKOSHI Yoshiji

  The Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation

• Saito Hideho

  The Musashino Electrical Communication Laboratory

• Horikoshi Yoshiji

  The Musashino Electrical Communication Laboratory

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• Epitaxial Growth of (AIGa)As and GaAs on (AlGa)As Substrate
• Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers
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• A New Liquid Phase Epitaxial Growth Method for the Growth of (AlGa)As, GaAs Multilayers
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