High Radiance Light-Emitting Diodes
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概要
- 論文の詳細を見る
High radiance light-emitting diodes with optical waveguides have been fabricated by cleaving the epitaxial wafers composed of GaAs substrate/nAl_xGa_<1-x>As/nAl_yGa_<1-y>As/compensated Al_zGa_<1-z>As/pAl_xGa_<1-x>As/nGaAs (x>y>z≧0), and a very small hemisphere radiator (300μm) was bonded to the emitting facet. In this configuration, a sufficient high radiance to serve as sources for multimode optical fiber transmission lines was obtained at a driving current of 300 mA (3.5 kA/cm^2); the DC radiance as high as 1400 W/str.cm^2 and the optical output of 0.6 mW within the aperture angle of 10 deg. have been obtained.
- 社団法人応用物理学会の論文
- 1976-03-05
著者
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Iwane Genzo
The Musashino Electrical Communication Laboratory N.t.t.
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Takanashi Yoshifumi
The Musashino Electrical Communication Laboratory N.t.t.
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Horikoshi Yoshiji
The Musashino Electrical Communication Laboratory
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HORIKOSHI Yoshiji
The Musashino Electrical Communication Laboratory, N.T.T.
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- Temperature Sensitive Threshold Current of InGaAsP-InP Double Heterostructure Lasers
- Efficient Coupling between Chalcogenide Glass Radiator Bonded LEDs with Optical Guide Structure and Optical Fibers
- High Radiance Light-Emitting Diodes
- A New Liquid Phase Epitaxial Growth Method for the Growth of (AlGa)As, GaAs Multilayers
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