(InAs)_1(GaAs)_1 Layered Crystal Grown by MOCVD
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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FUKUI Takashi
Musashino Electrical Communication Laboratory,NTT
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Fukui Takashi
Musashino Electrical Communication Laboratory Ntt
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Saito Hisao
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Fukui Takashi
Musashino Electrical Communication Laboratories N.t.t.
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FUKUI Takashi
Musashino Electrical Communication Laboratory, NTT
関連論文
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- Organometallic VPE Growth of InAs_Sb_xP_y on InAs
- Calculation of Bond Length in Ga_In_xAs Ternary Semiconductors
- (InAs)_1(GaAs)_1 Layered Crystal Grown by MOCVD
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide
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- Simultaneous Diffusion of Zinc and Cadmium into InAs
- Low-Temperature Behavior of the Threshold Current and Carrier Lifetime of InGaAsP-InP DH Lasers
- Degradation of InGaAsP-InP DH Lasers by In Solder
- Taper Growth of GaAs-AlGaAs Layers by Wipingless LPE
- (InAs)_1(GaAs)_1 Layered Crystal Grown on (100)InP by MOCVD
- Organometallic VPE Growth of InAs
- Field Effect of InP Photoluminescence in InP-Electrolyte Structure
- Anomalous Luminescence near the InGaAsP-InP Heterojunction Interface
- Properties of InP Films Grown by Organometallic VPE Method
- Comparison between Atmospheric and Reduced Pressure GaAs MOCVD
- Organometallic VPE Growth of InAs_Sb_x on InAs
- Effect of Impurities on the Surface Morphology of LPE-Grown InGaAsP and InP
- InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
- Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD
- Baking Effect on the Surface Morphology of GaAs-AlGaAs LPE
- Optically Induced Low Photoluminescence Regions in InGaAsP
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