Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD
スポンサーリンク
概要
- 論文の詳細を見る
Selectively-doped GaAs/n-Al_<0.3>Ga_<07>As heterostructures were grown by reduced-pressure metalorganic chemical vapor deposition. It is shown that the growth conditions in an undoped Al_<0.3>Ga_<0.7>As spacer layer have a remarkable effect on the two-dimensional electron gas (2DEG) mobility. A 2DEG mobility of 150000 cm^2/V・s is obtained for a sheet electron concentration (N_s) of 6.9×10^<11>cm^<:-2> at 4.2 K. The 2DEG mobility increases with incrasing N_s as a result of exposure to light and reaches a maximum value of 180000 cm^2/V・s at N_s=7.8×10^<11>cm^<-2>.
- 社団法人応用物理学会の論文
- 1984-09-20
著者
-
椿 光太郎
東洋大学工学部
-
Tsubaki Kotaro
Musashino Electrical Communication Laboratory
-
KOBAYASHI Naoki
Musashino Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
-
Fukui Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
-
Fukui Takashi
Musashino Electrical Communication Laboratories N.t.t.
-
Kobayashi Naoki
Musashino Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
-
Kobayashi Naoki
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- 3p-A-18 AlGaAs/GaAs2次元電子ガスの高磁場高電界における輸送現象
- 31a-Q-6 直列ポイントコンタクトの非平衡電流雑音特性II
- Al_2O_3/Si_3N_4薄層絶縁ゲートをもつチャネルドープAlGaN/GaNヘテロ構造FET(化合物半導体デバイスのプロセス技術)
- GaN系ヘテロ構造の電気伝導特性およびFET静特性
- SC-7-10 GaN系ヘテロ構造の電気伝導特性とFET特性
- GaN系ヘテロ構造の電気伝導特性およびFET静特性
- Longitudinal Magnetophonon Resonance in n-Type InP in Ohmic and Hot Electron Region
- Magnentophonon Resonance in Epitaxial n-Inp in High Pulsed Magnetic Fields
- 直列ポイントコンタクトの非平衡電流雑音特性
- 28a-F-6 周期ポテンシャル下の二次元電子ガスの強磁場伝導
- 29p-J-4 半導体微細構造の量子輸送
- Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
- Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
- Semiconductor Materials for 2〜4μm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers : SOLID SOLUTIONS
- Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 μm Wavelength
- Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
- Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition
- Organometallic VPE Growth of InAs_Sb_xP_y on InAs
- Calculation of Bond Length in Ga_In_xAs Ternary Semiconductors
- (InAs)_1(GaAs)_1 Layered Crystal Grown by MOCVD
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Heat Treatment of Zn-Doped p-Type InP
- Heat Treatment of n-Type InP in Controlled Phosphorus Vapor
- Surface Damage in InP Induced during SiO_2 Deposition by rf Sputtering
- AlGaN/GaNヘテロ構造FET (特集論文1 窒化物ワイドギャップ半導体電子デバイス)
- Liquid Phase Epitaxial Growth of In_Ga_xAs_Sb_y with InAs Enriched Composition on InAs Substrate
- Liquid Phase Epitaxial Growth of InAs_P_xSb_y on InAs Substrate
- Taper Growth of GaAs-AlGaAs Layers by Wipingless LPE
- (InAs)_1(GaAs)_1 Layered Crystal Grown on (100)InP by MOCVD
- Organometallic VPE Growth of InAs
- Field Effect of InP Photoluminescence in InP-Electrolyte Structure
- Anomalous Luminescence near the InGaAsP-InP Heterojunction Interface
- Properties of InP Films Grown by Organometallic VPE Method
- Comparison between Atmospheric and Reduced Pressure GaAs MOCVD
- Organometallic VPE Growth of InAs_Sb_x on InAs
- Effect of Impurities on the Surface Morphology of LPE-Grown InGaAsP and InP
- InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
- Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD
- Baking Effect on the Surface Morphology of GaAs-AlGaAs LPE
- Optically Induced Low Photoluminescence Regions in InGaAsP
- Carrier Concentration in Quantum Wires Fabricated by Ractive Ion Beam Etching
- DH Lasers Fabricated by New III-V Semiconductor Material InAsPSb
- 1.5μm InGaAsP/InP DH Laser with Optical Waveguide Structure
- Pseudoquaternary Phase Diagram Calculation of In_ Ga_xAs_Sb_y Quaternary System
- Sub-Micron Vertical Double Magnetic Barrier Device