Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 μm Wavelength
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-01-05
著者
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HORIKOSHI Yoshiji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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UEMURA Chikao
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Uemura Chikao
Ibaraki Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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KOBAYASHI Naoki
Musashino Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Naoki
Musashino Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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Kobayashi Naoki
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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- Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
- InGaAs/InGaAsP Avalanche Photodiodes and Analysis of Internal Quantum Efficiency
- Required Donor Density of Epitaxial Layers for Al_xGa_Sb Avalanche Photodiodes
- Organometallic VPE Growth of InAs_Sb_xP_y on InAs
- Far-Infrared Magneto-Absorption of the Nonequilibrium Electron System in Indium Phosphide
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal
- Growth of Low Dislocation Density InP Crystals by the SSD Method
- Growth of Dislocation-Free Undoped InP Crystals
- LEC Growth of GaSb Single Crystals Using Boric Oxide
- InP Single Crystal Growth by the Synthesis, Solute Diffusion Method
- GaSb Single Crystal Growth in Direction
- Lifetime of InGaAsP-InP and AlGaAs-GaAs DH Lasers Estimated by the Point Defect Generation Model
- Surface Defects on MBE-Grown GaAs
- Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
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- Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
- Analysis of Dark Currents and Minimum Detectable Powers for InGaAsP Optical Receivers
- Liquid Phase Epitaxial Growth of In_Ga_xAs_Sb_y with InAs Enriched Composition on InAs Substrate
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- Selectively-Doped GaAs/n-AlGaAs Heterostructures Grown by MOCVD
- Optically Induced Low Photoluminescence Regions in InGaAsP
- InGaAsP/InP Avalanche Photodiode
- Temperature Dependence of Ionization Coefficients for InP and 1.3 μm InGaAsP Avalanche Photodiodes
- Noise Performance of 1.3 μm InGaAsP Avalanche Photodiode at -190℃
- Interdiffusion of Al and Ga in Si-Implanted GaAs-AlAs Superlattices
- DH Lasers Fabricated by New III-V Semiconductor Material InAsPSb
- 1.5μm InGaAsP/InP DH Laser with Optical Waveguide Structure
- Pseudoquaternary Phase Diagram Calculation of In_ Ga_xAs_Sb_y Quaternary System
- Effect of Impurity Diffusion on the Characteristics of Avalanche Photodiode
- InP MIS Diodes Prepared by Anodic Oxidation