Horikoshi Yoshiji | Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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概要
- 同名の論文著者
- Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporationの論文著者
関連著者
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Horikoshi Yoshiji
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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HORIKOSHI Yoshiji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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Fukui Takashi
Musashino Electrical Communication Laboratories N.t.t.
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Kobayashi Naoki
Musashino Electric Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t
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OKAMOTO Hiroshi
Musashino Electrical Communication Laboratory,NTT
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Okamoto Hiroshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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HORIKOSHI Yoshiji
NTT Electrical Communications Laboratories
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KOBAYASHI Naoki
Musashino Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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Tarucha S
Ntt Basic Res. Lab. Kanagawa Jpn
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TARUCHA Seigo
Musashino Electrical Communication Laboratory,NTT
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Tarucha Seigo
Ntt Basic Research Laboratories Ntt Corporation
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Okamoto H
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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Tarucha Seigo
Ntt Basic Research Laboratories:department Of Physics University Of Tokyo
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Tarucha Seigo
Ntt Electrical Communications Laboratories
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Tarucha Seigo
Musashino Electrical Communication Laboratory Ntt
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Fukui Takashi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Tarucha S
Ntt Basic Research Laboratories Ntt Corporation
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TAKANASHI Yoshifumi
Musashino Electrical Communication Laboratory, N.T.T.
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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Saito Hisao
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory N.t.t.
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Kawashima Minoru
Musashino Electrical Communication Laboratories Nippon Telegraph And Telephone Public Corporation
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Kobayashi Naoki
Musashino Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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Okamaoto H
Laboratory Of Cardiovascular Pharmacology Department Of Biopharmaceutical Sciences Kobe Gakuin Unive
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Okamoto H
Department Of Systems And Control Engineering Anan National College Of Technology
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory N. T. T.
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory
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UEMURA Chikao
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Uemura Chikao
Ibaraki Electrical Communication Laboratory Nippon Telegraph & Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory N. T. T.
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory N.t.t.
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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FUKUI Takashi
Musashino Electrical Communication Laboratory,NTT
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Seki Masahiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Wakita Koichi
Musashino Electrical Communication Laboratory N.t.t.
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Wakita Koichi
Musashino Electrical Communication Laboratory N. T. T.
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KOBAYASHI Takeshi
Musashino Electrical Communication Laboratory, N.T.T.
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Takanashi Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Naoki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Takeshi
Musashino Electrical Communication Laboratory N.t.t.
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Kobayashi Takeshi
Musashino Electrical Communication Laboratories N.t.t.
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WAKITA Koichi
Musashino Electrical Communication Laboratory, N. T. T.
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HORIKOSHI Yoshiji
Musashino Electrical Communication Laboratory, N.T.T.
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Ploog K
Paul Drude Inst. Berlin Deu
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Ploog Klaus
Max-planck-institut Fur Festkorperforshung
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Ploog Klaus
Max-planck-institut Fur Festkorperforschung
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Fischer Albrecht
Max-planck-institut Fur Festkorperforschung
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SAKU Tadashi
NTT Basic Research Laboratories
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IWAMURA Hidetoshi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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SAKU Tadashi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Corporation
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Kobayashi Hideki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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OHMORI Yutaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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GOLDSTEIN Leon
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Iwamura Hidetoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Goldstein Leon
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation:(pre
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Fischer A
Max‐planck‐inst. Festkoerperforschung Stuttgart Deu
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Seki Yasuo
Musashino Electrical Communication Laboratory N. T. T.
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Saku T
Ntt Basic Res. Lab. Kanagawa Jpn
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Furukawa Yoshitaka
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ohmori Yutaka
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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IWANE Genzo
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Iwane Genzo
Musashino Electrical Communication Laboratory N. T. T.
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Hirayama Yoshiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electrical Communication Labordtory N. T. T
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TAKAHASHI Yoshifumi
Musashino Electrical Communication Laboratory N.T.T.
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TAKANASHI Yoshihumi
Musashino Electrical Communication Labordtory, N. T. T
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Iwamura H
Ntt Opto-electronics Laboratories
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Fischer A
Institut Fur Zoologie Universitat Mainz
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KAWAKAMI Tsuyoshi
Musashino Electrical Communication Laboratory, N. T. T.
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Suzuki Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegragh And Telephone Public Corporation
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Kawakami Tsuyoshi
Musashino Electrical Communication Laboratory N. T. T.
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Takanashi Yoshihumi
Musashino Electrical Communication Labordtory N. T. T
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Okamoto Hirohsi
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Suzuki Yoshifumi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Okamoto Hirohsi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Kobayashi Hideki
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electrical Comunication Laboratory Nippon Telegraph Telephone Public Corporation
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Horikoshi Yoshiji
Musashino Electrical Communication Laboratory N.t.t
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OTA Tadahisa
(Present adderss) Arthur D. Little(Japan), Inc
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Kawakami Tsuyoshi
Musashino Electrical Communication Laboratory
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Kobayashi Takeshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Ota Tadahisa
(present Adderss) Arthur D. Little(japan) Inc : Musashino Electrical Communication Laboratory Nippon
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TAKANASHI Yoshifumi
Musashino Electrical Communication Laboratory,N.T.T.
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KOBAYASHI Naoki
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Kobayashi Naoki
Musashino Electrical Communication Laboratory, Nippon Telegraph & Telephone Public Corporation
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Ploog Klaus
Max-Planck-Institut
著作論文
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells
- Carrier-Induced Energy-Gap Shrinkage in Current-Injection GaAs/AlGaAs MQW Heterostructures
- Room Temperature Operation of Al_Ga_Sb/GaSb Multi-Quantum Well Lasers Grown by Molecular Beam Epitaxy
- A Segmented Electrode Multi-Quantum-Well Laser Diode
- Effect of Well Size Fluctuation on Photoluminescence Spectrum of AlAs-GaAs Superlattices
- Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides
- Semiconductor Materials for 2〜4μm Region Optical Sources and Room Temperature Operation of InGaAsSb/AlGaAsSb DH Lasers : SOLID SOLUTIONS
- Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 μm Wavelength
- Liquid-Phase Epitaxial Growth of InGaAsSb/GaSb and InGaAsSb/AlGaAsSb DH Wafers
- InGaAs/InGaAsP Avalanche Photodiodes and Analysis of Internal Quantum Efficiency
- Required Donor Density of Epitaxial Layers for Al_xGa_Sb Avalanche Photodiodes
- Organometallic VPE Growth of InAs_Sb_xP_y on InAs
- Accelerated Life Test of AlGaAs-GaAs DH Lasers
- Improved Surface Morphology of AlGaAs-GaAs Heteroepitaxial Wafers by Magnesium Doping
- Lifetime of InGaAsP-InP and AlGaAs-GaAs DH Lasers Estimated by the Point Defect Generation Model
- Surface Defects on MBE-Grown GaAs
- Direct Observation of Lattice Arrangement in MBE Grown GaAs-AlGaAs Superlattices
- InGaAsP/InP Avalanche Photodiode Prepared by Zn-Diffusion
- Evidence of Total Reflection Mode Oscillation in PbSnSeTe-PbSeTe Double-Heterostructure Lasers
- PbSnSeTe-PbSeTe Lattice-Matched Double-Heterostructure Lasers
- Low Threshold PbSnSeTe-PbSeTe Lattice-Matched Double-Heterostructure Lasers
- Simultaneous Diffusion of Zinc and Cadmium into InAs
- Required Donor Concentration of Epitaxial Layers for Efficient InGaAsP Avalanche Photodiodes
- Analysis of Dark Currents and Minimum Detectable Powers for InGaAsP Optical Receivers
- Liquid Phase Epitaxial Growth of In_Ga_xAs_Sb_y with InAs Enriched Composition on InAs Substrate
- Liquid Phase Epitaxial Growth of InAs_P_xSb_y on InAs Substrate
- Organometallic VPE Growth of InAs
- Field Effect of InP Photoluminescence in InP-Electrolyte Structure
- Anomalous Luminescence near the InGaAsP-InP Heterojunction Interface
- Properties of InP Films Grown by Organometallic VPE Method
- Comparison between Atmospheric and Reduced Pressure GaAs MOCVD
- Organometallic VPE Growth of InAs_Sb_x on InAs
- InAsSbP-InAs Superlattice Grown by Organometallic VPE Method
- Optically Induced Low Photoluminescence Regions in InGaAsP
- InGaAsP/InP Avalanche Photodiode
- Temperature Dependence of Ionization Coefficients for InP and 1.3 μm InGaAsP Avalanche Photodiodes
- Noise Performance of 1.3 μm InGaAsP Avalanche Photodiode at -190℃
- Interdiffusion of Al and Ga in Si-Implanted GaAs-AlAs Superlattices
- DH Lasers Fabricated by New III-V Semiconductor Material InAsPSb
- 1.5μm InGaAsP/InP DH Laser with Optical Waveguide Structure
- Pseudoquaternary Phase Diagram Calculation of In_ Ga_xAs_Sb_y Quaternary System
- Effect of Impurity Diffusion on the Characteristics of Avalanche Photodiode
- InP MIS Diodes Prepared by Anodic Oxidation